DSM80100M document number: ds37319 rev. 2 - 2 1 of 6 www.diodes.com november 2014 ? diodes incorporated DSM80100M advance information pnp transistor with dual series switching diode features ? in tegrates o ne pnp transistor (q1 ) and t wo switching diodes (d1, d2) in a s ingle c ompact p ackage ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: sot26 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: matte tin finish a nnealed over copper l eadframe (lead - free plating ). solderable per mil - std - 202, method 208 ? terminal connections: see diagram ? weight: 0.01 grams ( a pproximate) ordering information (note 4 ) part number case packaging DSM80100M - 7 sot26 3,000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information date code key year 201 4 201 5 201 6 201 7 201 8 201 9 20 20 code b c d e f g h month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view top view pin configuration device schematic 100m = product type marking code (see electrical characteristics table) ym = date code marking y = year (ex: b = 2014) m = month (ex: 9 = september) 1 2 3 6 5 4 q1 d1 d2 1 2 4 6 5 3 q1 d1 d2 100m y m e3
DSM80100M document number: ds37319 rev. 2 - 2 2 of 6 www.diodes.com november 2014 ? diodes incorporated DSM80100M advance information maximum ratings C q1 (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit collector - base voltage v cbo - 8 0 v collector - emitter voltage v ceo - 8 0 v emitter - base voltage v ebo - 4.0 v continuous collector current i c(max) - 500 ma peak pulse collector current @ dc i ncrement for i c ; i b = 300ma; test duration >10s for each s tep. i cm - 1.0 a base current i b - 200 ma maximum ratings C d1 , d2 (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit non - repetitive peak reverse voltage v rm 100 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 75 v rms reverse voltage v r(rms) 53 v forward continuous current (note 5 ) i fm 300 ma average rectified output current (note 5 ) i o 200 ma non - repetitive peak forward surge current @ t = 1.0 s i fsm 2 0 a thermal characteristics characteristic symbol value unit power dissipation (note 5 ) p d 600 mw thermal resistance, junction to ambient air (note 5 ) r ? ja 208 c/w operating and storage temperature range t j, t stg - 65 to +150 c electrical characteristics C q1 (@ t a = +25c, unless otherwise specified.) characteristic (note 6 ) symbol min typ max unit test condition collector - base breakdown voltage bv cbo - 80 ? ? c = - 100 a, i e = 0 collector - emitter breakdown voltage bv ceo - 80 ? ? c = - 1.0ma, i b = 0 emitter - base breakdown voltage bv ebo - 4 ? ? e = - 100 a, i c = 0 collector cutoff current i cbo ? ? cb = - 6 0v, i e = 0 collector - emitter saturation voltage v ce(sat) ? ? c = - 100ma, i b = - 10ma dc current transfer ratio h fe 1 20 2 80 500 ? c = - 10ma, v ce = - 1.0v electrical characteristics C d1 , d2 (@ t a = +25c, unless otherwise specified.) characteristic symbol min max unit test condition reverse breakdown voltage (note 6 ) v (br)r 75 ? r = 100 a forward voltage v f ? f = 5.0ma ? ? f = 10ma ? ? f = 50ma ? ? f = 150ma leakage current (note 6 ) i r ? r = 75v ? ? ? r = 20v total capacitance c t ? r = 0 v , f = 1.0mhz reverse recovery time t rr ? f = i r = 10ma, i rr = 0.1 x i r , r l = 100 notes: 5 . device mounted on fr - 4 pc board with recommended pad layout, which can be found on our website at http://www.diodes.com. 6 . short duration pulse test used to minimize self - heating effect.
DSM80100M document number: ds37319 rev. 2 - 2 3 of 6 www.diodes.com november 2014 ? diodes incorporated DSM80100M advance information 0.1 1 10 100 1,000 0.01 0.1 1 - v , c o l l e c t o r - e m i t t e r s a t u r a t i o n c e ( s a t ) v o l t a g e ( v ) -i , collector current (ma) c fig. 4 typical collector-emitter saturation voltage vs. collector current i /i = 10 cb t = 85c a t = 25c a t = -55c a t = 150c a 1 10 100 1,000 i , collector current (ma) fig. 2 typical dc current gain vs. collector current c 100 1,000 10 h , d c c u r r e n t g a i n f e , t = a -55 c t = 8 a 5c t = a 150 c t = a 25 c v = v ce 5 10 100 1,000 10,000 100,000 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 6 collector cutoff current vs. ambient temperature a i , c o l l e c t o r c u t o f f c u r r e n t ( n a ) c b o v = 100v i = 0 cb e 0 0.1 1 10 100 i , collector current (ma) fig. 5 typical base emitter voltage vs. collector current c 1,000 0.2 0.4 0.6 0.8 1.0 1.2 v , b a s e e m i t t e r v o l t a g e ( v ) b e ( o n ) v = v ce 5 t = 150c a t = 25c a t = 5c a -5 t = 5c a 8 0 100 -25 0 25 50 75 100 125 150 p , p o w e r d i s s i p a t i o n ( m w ) d t , ambient temperature (c) fig. 1 power derating curve a -50 200 300 400 500 600 700 800 r = 208c/w (note 5) ? ja 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 2 4 6 8 10 v , collector-emitter voltage (v) fig. 3 typical collector current vs. collector-emitter voltage ce i , c o l l e c t o r c u r r e n t ( a ) c i = 1ma b i = 0.1ma b i = 2ma b i = 3ma b i = 4ma b i = 5ma b i = 8ma b
DSM80100M document number: ds37319 rev. 2 - 2 4 of 6 www.diodes.com november 2014 ? diodes incorporated DSM80100M advance information fig 11 operating temperature derating - d1, d2 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 v , reverse voltage (v) r t , a m b i e n t t e m p e r a t u r e ( c ) a ? 0 8 16 24 32 40 v , reverse voltage (v) fig. 7 typical capacitance characteristics - d1, d2 r 0.5 0.7 0.9 1.1 1.5 c a p a c i t a n c e ( p f ) f = 1mhz 1.3 t = 25c a 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 fig. 9 typical forward characteristics - d1, d2 v , instantaneous forward voltage (v) f 1.6 0.1 1 10 100 1,000 i , i n s t a n t a n e o u s f o r w a r d c u r r e n t ( m a ) f t = -55c a t = 25c a t = 85c a t = 150c a 0.1 1 10 100 v , collector emitter voltage (v) ce fig. 8 safe operation area for q1 0.0001 0.001 0.01 0.1 1 10 i , c o l l e c t o r c u r r e n t ( a ) c t = 25c single pulse a dc p = 100ms w p = 10ms w p = 1ms w p = 100s w 0.001 0.01 0.1 1 10 100 0 10 20 30 40 50 60 70 80 90 100 i , i n s t a n t a n e o u s r e v e r s e c u r r e n t ( a ) r ? v , instantaneous reverse voltage (v) fig. 10 typical reverse characteristics - d1, d2 r
DSM80100M document number: ds37319 rev. 2 - 2 5 of 6 www.diodes.com november 2014 ? diodes incorporated DSM80100M advance information package outline dimensions please see ap02002 at http://w ww.diodes.com/datasheets/ap02002 .pdf for the latest version. suggested pad layout please see ap02001 at http://w ww.diodes.com/datasheets/ap02001 .pdf for the latest version. sot 26 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d ? ? ? ? h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 ? ? ? ? all dimensions in mm dimensions value (in mm) z 3.20 g 1.60 x 0.55 y 0.80 c1 2.40 c2 0.95 x z y c1 c2 c2 g a m j l d b c h k
DSM80100M document number: ds37319 rev. 2 - 2 6 of 6 www.diodes.com november 2014 ? diodes incorporated DSM80100M advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents und er the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any cus tomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless aga inst all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associa ted with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united state s, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. lif e support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device o r to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all leg al, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may b e provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. co pyright ? 2014, diodes incorporated www.diodes.com
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